Analysis and simulation of self-heating effects on RF LDMOS devices

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn 2005, Issue , 2005, Pages 231-234

  Belaid M A ^a   Ketata, K ^a   Maanane, H ^a   Gares, M ^a   Mourgues, K ^a   Marcon, J ^a  

^a UNIVERSITÉ DE ROUEN   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; COMPUTER SIMULATION; ELECTRIC CURRENTS; HEAT RESISTANCE; MATHEMATICAL MODELS; THERMAL EFFECTS; THRESHOLD VOLTAGE;

HEAT FLOW; RF LDMOS DEVICES; SELF-HEATING EFFECTS; SYMBOLIC DEFINED DEVICE (SDD);

MOS DEVICES;

EID: 33845450243     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/sispad.2005.201515     Document Type: Conference Paper

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