Simulation of Si-Ge BiCMOS ESD structures operation including spatial current instability mode

2002 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings

Volumn 2, Issue , 2002, Pages 745-748

  Vashchenko, V ^a   Hopper, P ^a  

^a NATIONAL SEMICONDUCTOR CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROSTATIC DISCHARGE; GERMANIUM; MICROELECTRONICS;

2D SIMULATIONS; 3D EFFECTS; 3D SIMULATIONS; CURRENT INSTABILITY; ESD PROTECTION; ESD STRESS; HOT SPOT; SAFE OPERATION;

ELECTROSTATIC DEVICES;

EID: 84906655843     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MIEL.2002.1003364     Document Type: Conference Paper

References (6)

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3. V.A. Vashchenko, et al "Negative differential conductivity and isothermal drain breakdown of the GaAs MESFET, "IEEE Trans. Electron Devices, vol. ED-43, no.4, pp. 513-518, 1996.
4. V.A. Vashchenko, Y.B. Martynov, V.F. Sinkevitch and A.S. Tager "Electrical current instability at gate breakdown in GaAs MESFET, "IEEE Trans. Electron Devices,vol.43, no.12, , pp.2080-2084, 1996
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