Composite-collector InGaP/GaAs HBTs for linear power amplifiers

IEICE Transactions on Electronics

Volumn E88-C, Issue 4, 2005, Pages 672-677

  Niwa, Takaki ^a,b,c   Ishigaki, Takashi ^a,d   Kurosawa, Naoto ^a,b,e   Shimawaki, Hidenori ^a,f,g   Tanaka, Shinichi ^a,c  

^a NEC CORPORATION   (Japan)

^b Electron Device Society   (Japan)

^c IEEE   (Japan)

^d Institute of Electrical and Electronics Engineers

^e Society of Applied Physics

^f System Device Research Laboratories   (Japan)

^g JAPAN SOCIETY OF APPLIED PHYSICS   (Japan)

Author keywords

Breakdown voltage; Composite collector; Gallium arsenide; HBT; Linearity; Ruggedness; WCDMA

Indexed keywords

CODE DIVISION MULTIPLE ACCESS; ELECTRIC BREAKDOWN; ELECTRIC POTENTIAL; POWER AMPLIFIERS; SEMICONDUCTING GALLIUM ARSENIDE;

COMPOSITE COLLECTOR; GALLIUM ARSENIDE; LINEARITY; RUGGEDNESS; WCDMA;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 33645572267     PISSN: 09168524     EISSN: 17451353     Source Type: Journal    
DOI: 10.1093/ietele/e88-c.4.672     Document Type: Article

References (8)

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