A single-chip Si-LDMOS power amplifier for GSM

Digest of Technical Papers - IEEE International Solid-State Circuits Conference

Volumn 48, Issue , 2005, Pages

  Shimizu, Toshihiko ^a   Matsunaga, Yoshikuni ^a   Sakurai, Satoshi ^a   Yoshida, Isao ^a   Hotta, Masao ^a  

^a RENESAS TECHNOLOGY CORP   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POWER SYSTEMS; GLOBAL SYSTEM FOR MOBILE COMMUNICATIONS; INTEGRATED CIRCUITS; NETWORKS (CIRCUITS); POWER AMPLIFIERS; TELEPHONE SETS;

CONTROL BLOCKS; HANDSET PHONES; MATCHING CIRCUITS; OUTPUT POWER;

MOS DEVICES;

EID: 28144441803     PISSN: 01936530     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. I. Aoki et al., "A Fully-Integrated, 1.8-V, 2.8-W, 1.9-GHz, CMOS Power Amplifier," IEEE MTT-S Tech. Dig., pp. 199-202, 2003.
2. T. Shimizu et al., "A Small GSM Power Amplifier Module using Si-LDMOS Driver MMIC," ISSCC Tech. Dig. Papers, pp. 196-197 197, Feb., 2004.
3. T. Sowlati et al., "Quad-band GSM/GPRS/EDGE Polar Loop Transmitter," ISSCC Tech. Dig. Papers, pp. 186-187, Feb., 2004.