Growth and properties of SiGe structures obtained by selective epitaxy on finite areas

Applied Physics A: Materials Science and Processing

Volumn 87, Issue 3, 2007, Pages 485-490

  Vescan, L ^a   Stoica, T ^b   Sutter, E ^c  

^a Forschungszentrum Jülich ^*  (Germany)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

^c BROOKHAVEN NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; LIGHT EMITTING DIODES; NANOSTRUCTURES; NANOTECHNOLOGY; SEMICONDUCTOR GROWTH;

EMISSION EFFICIENCY; NANOSCALE DEVICES; SELECTIVE EPITAXY GROWTH (SEG);

SEMICONDUCTING SILICON COMPOUNDS;

EID: 33947227314     PISSN: 09478396     EISSN: 14320630     Source Type: Journal    
DOI: 10.1007/s00339-007-3917-9     Document Type: Article

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