Lateral ordering of Ge islands on Si mesas made by selective epitaxial growth

Materials Science and Engineering: B

Volumn 89, Issue 1-3, 2002, Pages 49-53

  Vescan, L ^a   Stoica, T ^b   Hollander B ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b NATIONAL INSTITUTE OF MATERIALS PHYSICS   (Romania)

Author keywords

Ge islands; High index planes; Lateral ordering; LPCVD; Photoluminescence; SEG

Indexed keywords

CHARGE TRANSFER; CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; MORPHOLOGY; PHOTOLUMINESCENCE; SEMICONDUCTING GERMANIUM; STRAIN;

LATERAL ORDERING; SELECTIVE EPITAXIAL GROWTH (SEG);

SEMICONDUCTING SILICON;

EID: 0037074850     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(01)00789-9     Document Type: Conference Paper

References (14)