Ge dots embedded in SiO2 obtained by oxidation of Si/Ge/Si nanostructures

Nanotechnology

Volumn 17, Issue 19, 2006, Pages 4912-4916

  Stoica, T ^a   Sutter, E ^b  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b BROOKHAVEN NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITORS; NANOSTRUCTURED MATERIALS; OXIDATION; SILICON COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY;

CHARGE RETENTION; DENSITY OF HOLES; SI/GE/SI NANOSTRUCTURES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33748893601     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/17/19/022     Document Type: Article

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