Selective growth of Ge quantum dots on chemically prepared SiO 2/Si(001) surfaces

Materials Science and Engineering: B

Volumn 101, Issue 1-3, 2003, Pages 199-203

  Nguyen, Lam H ^a   Le Thanh, V ^a   Debarre D ^a   Yam, V ^a   Bouchier, D ^a  

^a UNIV PARIS SUD   (France)

Author keywords

Ge quantum dots; Si buffer layers; SiO2 Si(001) surfaces

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DESORPTION; HIGH ENERGY ELECTRON DIFFRACTION; LITHOGRAPHY; MOLECULAR BEAM EPITAXY; NUCLEATION; SELF ASSEMBLY; SEMICONDUCTING GERMANIUM; SILICA;

GERMANIUM QUANTUM DOTS; SILICON BUFFER LAYERS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 1642359857     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(02)00722-5     Document Type: Conference Paper

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