Optoelectronic properties of thick SiGe layers grown as small mesas by low pressure chemical vapor deposition

Journal of Applied Physics

Volumn 93, Issue 8, 2003, Pages 4461-4467

  Stoica, T ^a   Vescan, L ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DISLOCATIONS (CRYSTALS); ELECTROLUMINESCENCE; EPITAXIAL GROWTH; LIGHT EMISSION; LIGHT EMITTING DIODES; OPTOELECTRONIC DEVICES; PHOTOCURRENTS; SECONDARY ION MASS SPECTROMETRY; THICK FILMS;

BAND GAPS; TUNNELING CURRENT;

SILICON COMPOUNDS;

EID: 0038564300     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1559636     Document Type: Article

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