Line shape analysis of electron-hole plasma electroluminescence in fully strained SiGe epitaxial layers

Journal of Applied Physics

Volumn 94, Issue 7, 2003, Pages 4400-4408

  Stoica, T ^a   Vescan, L ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTROLUMINESCENCE; ENERGY GAP; EPITAXIAL GROWTH; PHOTOCURRENTS; THERMAL EFFECTS;

RENORMALIZED BAND GAP;

SILICON COMPOUNDS;

EID: 0142089321     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1606513     Document Type: Article

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