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Volumn 16, Issue 3-4, 2003, Pages 359-365

Electroluminescence study on electron hole plasma in strained SiGe epitaxial layers

Author keywords

Electroluminescence; Electron hole plasma; Photovoltaic effect; Plastic relaxation; Renormalized gap; SiGe

Indexed keywords

CURRENT DENSITY; ELECTROLUMINESCENCE; PHOTOCURRENTS; PLASMAS; QUANTUM EFFICIENCY; SEMICONDUCTOR DIODES;

EID: 0037370437     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(02)00625-2     Document Type: Conference Paper
Times cited : (10)

References (20)
  • 20
    • 0003644756 scopus 로고    scopus 로고
    • Silicon germanium and SiGe:Carbon
    • INSPEC, Inst. of Electrical Engineers, London, UK
    • E. Kasper, K. Lyutovich (Eds.), Silicon Germanium and SiGe:Carbon, EMIS Data Rev. Series No. 24, INSPEC, Inst. of Electrical Engineers, London, UK, 2000.
    • (2000) EMIS Data Rev. Series , vol.24
    • Kasper, E.1    Lyutovich, K.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.