Nucleation of Ge islands on Si mesas with high-index facets

Materials Science and Engineering: B

Volumn 101, Issue 1-3, 2003, Pages 9-13

  Goryll, M ^a   Vescan, L ^a   Luth H ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

Ge dots; High index planes; LPCVD; Self organization; Si mesas

Indexed keywords

ANISOTROPY; RELAXATION PROCESSES; SELF ASSEMBLY; SILICA; SILICON; STRAIN; SUBSTRATES; THERMOOXIDATION;

GE DOTS; HIGH-INDEX PLANES; LPCVD; SELF-ORGANIZATION; SI MESAS;

NUCLEATION;

EID: 1642371343     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(02)00685-2     Document Type: Conference Paper

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