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Volumn 5, Issue , 2004, Pages 135-145

Detection of iron contamination in internally gettered p-type silicon wafers by lifetime measurements

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; APPROXIMATION THEORY; CONTAMINATION; ELECTRIC POTENTIAL; NUCLEATION; PRECIPITATION (CHEMICAL); SILICON WAFERS;

EID: 17144426089     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (10)

References (17)
  • 11
    • 34248679114 scopus 로고    scopus 로고
    • Standard test method for interstitial atomic oxygen content of silicon by infrared absorption
    • ASTM F 1188-93a, 10.05.
    • ASTM F 1188-93a, Standard Test Method for Interstitial Atomic Oxygen Content of Silicon by Infrared Absorption, 2000 Annual Book of ASTM Standards, vol. 10.05.
    • 2000 Annual Book of ASTM Standards
  • 13
    • 33646222573 scopus 로고    scopus 로고
    • Gupta, D. C., Bacher, F. R. and Hughes, W. M., Editors, ASTM, West Conshohocken
    • T. H. Wang and T. F. Ciszek, in Recombination Lifetime Measurements in Silicon, Gupta, D. C., Bacher, F. R. and Hughes, W. M., Editors, p. 88, ASTM, West Conshohocken (1998).
    • (1998) Recombination Lifetime Measurements in Silicon , pp. 88
    • Wang, T.H.1    Ciszek, T.F.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.