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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 4 SUPPL. A, 1998, Pages 1689-1692

Iron gettering controlled by size and density of oxygen precipitates in Czochralski-grown silicon

(3) Takahashi, Hideki b Yamada Kaneta, Hiroshi b Suezawa, Masashi a

a TOHOKU UNIVERSITY (Japan)

b FUJITSU LABORATORIES LTD (Japan)

Author keywords

Czochralski grown silicon; ESR; Internal gettering; Iron in silicon; Oxygen precipitates

Indexed keywords

ANNEALING; COOLING; CRYSTAL GROWTH FROM MELT; DENSITY (SPECIFIC GRAVITY); ELECTRON SPIN RESONANCE SPECTROSCOPY; IRON; OXYGEN; PRECIPITATION (CHEMICAL); SEMICONDUCTOR GROWTH; THERMAL EFFECTS;

GETTERING EFFICIENCY;

SEMICONDUCTING SILICON;

EID: 0032049114 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.37.1689 Document Type: Article

Times cited : (15)

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