Gettering of iron by oxygen precipitates

Applied Physics Letters

Volumn 72, Issue 12, 1998, Pages 1460-1462

  Hieslmair, H ^a   Istratov, A A ^a   McHugo, S A ^a   Flink, C ^a   Heiser, T ^a   Weber, E R ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001023952     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.120592     Document Type: Article

References (9)

1. D. Gilles, E. R. Weber, S. Hahn, O. R. Monteiro, and K. Cho, in Semiconductor Silicon 1990, edited by H. R. Huff, K. G. Barraclough, and J. Chikawa (Electrochemical Society, Pennington, NJ, 1990), p. 697.
2. D. Gilles, E. R. Weber, and S. Hahn, Phys. Rev. Lett. 64, 196 (1990).
3. F. S. Ham, J. Phys. Chem. Solids 6, 335 (1958).
4. H. Hieslmair, A. A. Istratov, T. Heiser, and E. R. Weber (unpublished).
5. The term "nucleation site" will be used for all sites with an initial radius of the smallest nucleus, i.e., a pair of atoms, which results in a nonexponential decay. The term "precipitation site" will refer to sites with a larger initial radius resulting in an exponential decay.
6. H. Fujimori, J. Electrochem. Soc. 144, 3180 (1997).
7. S. A. McHugo, M. Mizuno, F. G. Kirscht, and E. R. Weber, Appl. Phys. Lett. 66, 2840 (1995).
8. E. R. Weber, Appl. Phys. A: Solids Surf. 30, 1 (1983).
9. H. Hieslmair (unpublished).