A model for oxygen precipitation in Czochralski silicon during crystal growth

Journal of Crystal Growth

Volumn 174, Issue 1-4, 1997, Pages 163-169

  Kobayashi, Sumio ^a  

^a Sumitomo Metal Industries   (Japan)

Author keywords

Czochralski growth; Mathematical model; Nucleation; Oxygen; Precipitation; Silicon

Indexed keywords

CRYSTAL GROWTH FROM MELT; MATHEMATICAL MODELS; NUCLEATION; OXYGEN; POINT DEFECTS; PRECIPITATION (CHEMICAL);

CZOCHRALSKI SILICON;

SEMICONDUCTING SILICON;

EID: 0031547227     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)01099-8     Document Type: Article

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