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Journal of the Electrochemical Society

Volumn 149, Issue 6, 2002, Pages

Intrinsic gettering of copper in silicon wafers

(4) Isomae, Seiichi a Ishida, Hidetsugu a Itoga, Toshihiko a Hozawa, Kazuyuki a

a HITACHI LTD (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COMPOSITION EFFECTS; COMPUTER SIMULATION; CONTAMINATION; DEPOSITION; HEATING; OXYGEN; PRECIPITATION (CHEMICAL); SILICON WAFERS; SURFACE PHENOMENA; SURFACE PROPERTIES; X RAY ANALYSIS;

FOKER-PLANCK EQUATION; GETTERING EFFICIENCY; INTRINSIC GETTERING; OXYGEN PRECIPITATION DENSITY; SURFACE CONCENTRATION; TOTAL REFLECTION X RAY FLUORESCENCE;

COPPER;

EID: 0036607195 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.1475694 Document Type: Article

Times cited : (21)

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