Transparent low-work-function indium tin oxide electrode obtained by molecular scale interface engineering

Applied Physics Letters

Volumn 85, Issue 9, 2004, Pages 1616-1618

  Osikowicz, W ^a   Crispin, X ^a   Tengstedt, C ^a   Lindell, L ^a   Kugler, T ^a,b   Salaneck, W R ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

^b Cambridge Research Laboratory   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; ANNEALING; CHARGE TRANSFER; INTERFACES (MATERIALS); LIGHT EMISSION; OPTOELECTRONIC DEVICES; PHOTOELECTRON SPECTROSCOPY; POLYMERS; REDOX REACTIONS; ULTRAVIOLET RADIATION;

DIPOLE MOMENTS; INDIUM TIN OXIDE (ITO); METAL-OXIDE SURFACES; POLYMER LIGHT-EMITTING DEVICES;

INDIUM COMPOUNDS;

EID: 4944240830     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1785873     Document Type: Article

References (29)

1. P. W. M. Blom, M. J. M. de Jong, and C. T. H. F. Liedenbaum, 9, 390 (1998).
2. G. Greczynski, W. R. Salaneck, and M. Fahlman, Appl. Surf. Sci. 175, 319 (2001).
3. A. Rajagopal, N. Koch, J. Ghijsen, R. L. Johnson, K. Kaeriyama, G. Leising, and J.-J. Pireaux, J. Appl. Phys. 87, 1331 (2000).
4. R. H. Friend, A. B. Holmes, and S. C. Morrati, U.S. Patent No. 5,965,979 (12 October 1999).
5. J. Ouyang, T.-F. Guo, Y. Yang, H. Higuchi, M. Yoshioka, and T. Nagat-suka, Adv. Mater. (Weinheim, Ger.) 14, 915 (2002).
6. F. Nüesch, K. Kamarás, and L. Zuppiroli, Chem. Phys. Lett. 283, 194 (1998).
7. F. Nüesch, F. Rotzinger, L. Si-Ahmed, and L. Zuppiroli, Chem. Phys. Lett. 288, 861 (1998).
8. I. H. Campbell, J. D. Kress, R. L. Martin, D. L. Smith, N. N. Barashkov, and J. P. Ferraris, Appl. Phys. Lett. 71, 3528 (1997).
9. A. Vilan, A. Shanzer, and D. Cahen, Nature (London) 404, 166 (2000).
10. C. Ganzorig, K.-J. Kwak, K. Yagi, and M. Fujihira, Appl. Phys. Lett. 79, 272 (2001).
11. R. A. Hatton, S. R. Day, M. A. Chesters, and M. R. Willis, Thin Solid Films 394, 292 (2001).
12. J. Schwartz, F. L. Bruner, N. Koch, A. R. Span, S. L. Bernasek, and A. Kahn, Synth. Met. 138, 223 (2003).
13. I. G. Hill, A. Rajagopal, A. Kahn, and Y. Hu, Appl. Phys. Lett. 73, 662 (1998).
14. H. Ishii, K. Sugiyama, F. Ito, and K. Seki, Adv. Mater. (Weinheim, Ger.) 11, 605 (1999).
15. D. M. Alloway, M. Hofmann, D. L. Smith, N. E. Gruhn, A. L. Graham, J. Ramon Colorado, V. H. Wysocki, T. R. Lee, P. A. Lee, and N. R. Armstrong, J. Phys. Chem. B 107, 11690 (2003).
16. X. Crispin, V. Geskin, A. Crispin, J. Cornil, R. Lazzaroni, W. R. Salaneck, and J.-L. Bredas, J. Am. Chem. Soc. 124, 8131 (2002).
17. T. Kugler and W. R. Salaneck, C. R. Acad. Sci. Paris 1, 409 (2000).
18. C. Donley, D. Dunphy, D. Paine, C. Carter, K. Nebesny, P. Lee, D. Alloway, and N. R. Armstrong, Langmuir 18, 450 (2002).
19. M. Kuroboshi, M. Tanaka, S. Kishimoto, K. Goto, M. Mochizuki, and H. Tanaka, Tetrahedron Lett. 41, 81 (2000).
20. P.-M. Allemand, K. C. Khemani, A. Koch, F. Wudl, K. Holczer, S. Dono-van, G. Gruner, and J. D. Thompson, Science 253, 301 (1991).
21. J. R. Fox, B. M. Foxman, D. Guarrera, J. S. Miller, J. C. Calabrese, and A. H. Reis, J. Mater. 6, 1627 (1996).
22. C. Burkholder, W. R. Dolbier, and M. Médebielle, J. Org. Chem. 63, 5385 (1998).
23. R. C. Weast (CRC, Boca Raton, Florida, 1988).
24. W. R. Salaneck, S. Stafström, and J. L. Brédas, Conjugated Polymer Surfaces and Interfaces: Electronic and Chemical Structure of Interfaces for Polymer Light-Emitting Devices (Cambridge University Press, Cambridge, UK, 1996).
25. ** basis set. The energy axes is scaled by factor of 0.94 and Gaussian functions (0.25 eV full width at half maximum) are centered at each eigenenergy.
26. W. Osikowicz, A. W. Denier van der Gon, X. Crispin, M. P. de Jong, R. Friedlein, L. Groenendaal, M. Fahlman, D. Beljonne, R. Lazzaroni, and W. R. Salaneck, J. Chem. Phys. 119, 10415 (2003).
27. J. Cornil, S. Vanderdonckt, R. Lazzaroni, D. dos Santos, G. Thys, H. Geise, L.-M. Yu, M. Szablewski, D. Bloor, M. Lögdlund, W. Salaneck, N. Gruhn, D. Lichtenberger, P. Lee, N. Armstrong, and J. Brédas, Chem. Mater. 11, 2436 (1999).
28. T.-F. Guo, S. Pyo, S.-C. Chang, and Y. Yang, Adv. Funct. Mater. 11, 339 (2001).
29. Covion Organic Semiconductors GmbH, Industrial Park Höchst, Building G 865, D-65926 Frankfurt am Main, Germany.