Structural and electrical properties of low resistance Pt/Pd/Au contact on p-GaN

Journal of Electroceramics

Volumn 17, Issue 2-4, 2006, Pages 277-281

  Yoon, Young Soo ^a   Kim, Han Ki ^b  

^a Konkuk University   (South Korea)

^b Kumoh National Institute of Technology   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; AUGER ELECTRON SPECTROSCOPY; ELECTRIC CONTACTS; ELECTRIC RESISTANCE; INTERFACES (MATERIALS); X RAY DIFFRACTION ANALYSIS;

ANNEALING TEMPERATURE; CONTACT RESISTIVITY; GLANCING ANGLE X-RAY DIFFRACTION (GXRD) ANALYSIS;

ELECTRIC PROPERTIES;

EID: 33847220425     PISSN: 13853449     EISSN: 15738663     Source Type: Journal    
DOI: 10.1007/s10832-006-7729-7     Document Type: Conference Paper

References (33)

1. S. Nakamura, M. Senoh, and T. Mukai, Jpn. J. Appl. Phys., 32, L8 (1993).
2. H. Amano, N. Sawaki, A. Akasaki, and Y. Toyoda, Appl. Phys. Lett, 48, 353 (1986).
3. K. Itoh, T. Kawamoto, H. Amano, K. Hiramatsu, and I. Akasaki, Jpn. J. Appl. Phys., 30, 1924 (1991).
4. S. Nakamura, T. Mukai, M. Senoh, S. Nagahama, and N. Iwasa, J. Appl. Phys., 74, 3911 (1993).
5. J.K. Ho, C.S. Jong, C.C. Chiu, C.N. Huang, C.Y. Chen, and K.K. Shih, Appl. Phys. Lett., 74, 1275 (1999).
6. J.K. Sheu, Y.K. Su, G.C. Chi, P.L. Koh, M.J. Jou, C.M. Chang, C.C. Liu, and W.C. Hung, Appl. Phys. Lett., 74, 2340 (1999).
7. J.-S. Jang, I.-S. Jang, H.-K. Kim, S. Lee, T.-Y. Seong, and S.-J. Park, Appl. Phys. Lett., 74, 70 (1999).
8. H.-K. Kim, T.-Y. Seong, and C.-R. Lee, J. Electron. Mat., 148 (3), 266 (2001).
9. Y. Koide, H. Ishikawa, S. Kobayashi, S. Yamasaki, S. Nagai, J. Umezaki, M. Koike, and M. Murakami, Appl. Surf. Sci., 117/118, 373 (1997).
10. J.K. Sheu, Y.K. Su, G.C. Chi, W.C. Chen, C.Y. Chen, C.N. Huang, J.M. Hong, Y.C. Yu, C.W. Wang, and E.K. Lin, J. Appl. Phys., 83, 3172 (1998).
11. J.S. Kwak, K.Y. Lee, J.Y. Han, J. Cho, C. Chae, O.H. Nam, and Y. Park, Appl. Phys. Lett., 79, 3254 (2001).
12. J.K. Kim, J.-L. Lee, J.W. Lee, H.E. Shin, Y.J. Park, and T. Kim, Appl. Phys. Lett., 73, 2953 (1998).
13. J.-S. Jang, S.-J. Park, and T.-Y. Seong, Appl. Phys. Lett., 76, 2898 (2000).
14. J. Sun, K.A. Rickert, J.M. Redwing, A.B. Ellis, F.J. Himpsel, and T. F. Kuech, Appl. Phys. Lett., 76, 415 (2000).
15. J.-O. Song, D.-S. Leem,. J.S. Kwak, S.N. Lee, O.H. Nam, Y. Park, and T.-Y. Seong, Appl. Phys. Lett., 84, 1504 (2004).
16. J.-O. Song, D.-S. Leem, and T.-Y. Seong, Appl. Phys. Lett., 83, 3513 (2003).
17. J.-O. Song, D.-S. Leem, and T.-Y. Seong, Appl. Phys. Lett., 84, 4663 (2004).
18. D.-S. Leem, J.-O. Song, J.S. Kwak, Y. Park, and T.-Y. Seong, Electrochem. Solid-State Lett., 7, G210 (2004).
19. J.K. Kim, H.W. Jang, C.C. Kim. J.H. Je, K.A. Rickert, T.F. Kuech, J.-L. Lee, J. Vac. Sci. Technol. B, 21, 87 (2003).
20. T. Arai, H. Sueyoshi, Y. Koide, M. Moriyama, and M. Murakami, J. Appl. Phys., 89, 2826 (2001).
21. J.K. Kim and J.-L. Lee, J. Electrochem. Soc., 149, G266 (2002).
22. L. Zhou, W. Lanford, A.T. Ping, L Adesida, J.W. Yang, and A. Khan, Appl. Phys. Lett. 76, 3451 (2000).
23. H.W. Jang, H.K. Cho, J.Y. Lee, and J.-L. Lee, J. Electrochem. Soc., 150, G212 (2003).
24. J.K. Kim, J.-L.Lee, J.W. Lee, H.E. Shin, Y.J. Park, and T. Kim, Appl. Phys. Lett., 73, 2953 (1998).
25. J.S. Kwak, O.-H. Nam, and Y. Park, Appl. Phys. Lett., 80, 3554 (2002).
26. H.-K. Kim, I. Adesida, and T.-Y. Seong, J. Vac. Sci. Technol., A22, 1101 (2004).
27. H.-K. Kim., T.-Y. Seong, I. Adesida, C.W. Tang, and K.M. Lau, Appl. Phys. Lett., 84, 1710 (2004).
28. S. Murai, H. Masuda, Y. Koide, and M. Murakami, Appl. Phys. Lett., 80, 2934 (2002).
29. V. Adivarahan, A. Lunev, M.A. Khan, J. Yang, G. Simin, M.S. Shur, and R. Gaska, Appl. Phys. Lett. 78, 2781 (2001).
30. J.-S. Jang, S.-J. Park, and T.-Y. Seong, J. Vac. Sci. & Technol., A 17, 1668 (1999).
31. S.E. Mohney and X. Lin, J. Electron. Mater., 25, 811 (1996).
32. J. Sun, K.A. Rickert, J.M. Redwing, A.B. Ellis, F.J. Himpsel, T.F. Kuech, Appl. Phys. Lett., 76, 415 (2000).
33. H.-K. Kim, S.-H. Han, T.-Y. Seong, and W.-K. Choi, Appl. Phys. Lett., 77, 1647 (2000).