Interfacial reaction effect on the ohmic properties of a Pt/Pd/Au contact on p-type GaN

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 22, Issue 4, 2004, Pages 1101-1104

  Kim, Han Ki ^a   Adesida, I ^b   Seong, Tae Yeon ^c  

^a Samsung SDI   (South Korea)

^b University of Illinois at Urbana Champaign   (United States)

^c Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CONTACT RESISTIVITY; GLANCING ANGLE X-RAY DIFFRACTION; INTERFACIAL REACTIONS; OHMIC PROPERTIES;

ANNEALING; AUGER ELECTRON SPECTROSCOPY; CARRIER CONCENTRATION; CARRIER MOBILITY; DIFFUSION; DOPING (ADDITIVES); ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; NITROGEN; SURFACE CHEMISTRY; SURFACE ROUGHNESS; THERMODYNAMIC STABILITY; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

OHMIC CONTACTS;

EID: 4344658488     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1738657     Document Type: Article

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