Low-resistance and transparent ohmic contacts to p-type GaN using Zn-Ni solid solution/Au scheme

Applied Physics Letters

Volumn 84, Issue 23, 2004, Pages 4663-4665

  Song, June O ^a   Leem, Dong Seok ^a   Seong, Tae Yeon ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CURRENT VOLTAGE CHARACTERISTICS; DEPOSITION; ELECTRIC RESISTANCE; GALLIUM NITRIDE; GOLD; LIGHT EMITTING DIODES; LIGHT TRANSMISSION; NICKEL; OXIDATION; SEMICONDUCTOR QUANTUM WELLS; SOLID SOLUTIONS; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC;

BUFFERED OXIDE ETCH (BOE); CONTACT RESISTANCE; DEIONIZED (DI) WATER; MULTIPLE QUANTUM WELLS (MQW);

OHMIC CONTACTS;

EID: 3042596219     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1759774     Document Type: Article

References (21)

1. J. K. Sheu, Y. K. Su, G. C. Chi, P. L. Koh, M. J. Jou, C. M. Chang, C. C. Liu, and W. C. Hung, Appl. Phys. Lett. 74, 2340 (1999).
2. J.-K. Ho, C.-S. Jong, C. C. Chiu, C.-N. Huang, K.-K. Shih, L.-C. Chen, F.-R. Chen, and J.-J. Kai, J. Appl. Phys. 86, 4491 (1999).
3. T. Maeda, Y. Koide, and M. Murakami, Appl. Phys. Lett. 75, 4145 (1999).
4. J.-S. Jang and T.-Y. Seong, Appl. Phys. Lett. 76, 2743 (2000).
5. J.-S. Jang, S.-J. Park, and T.-Y. Seong, J. Vac. Sci. Technol. B 17, 2667 (1999).
6. J. Sun, K. A. Rickert, J. M. Redwing, A. B. Ellis, F. J. Himpsel, and T. F. Kuech, Appl. Phys. Lett. 76, 415 (2000).
7. J. L. Lee, J. K. Kim, J. W. Lee, Y. J. Park, and T. I. Kim, Solid-State Electron. 43, 435 (1999).
8. J.-S. Jang, S.-J. Park, and T.-Y. Seong, Appl. Phys. Lett. 76, 2898 (2000).
9. L. Zhou, W. Lanford, A. T. Ping, I. Adesida, J. W. Yang, and A. Khan, Appl. Phys. Lett. 76, 3451 (2000).
10. J.-S. Jang, I.-S. Chang, H.-K. Kim, T.-Y. Seong, S. Lee, and S.-J. Park, Appl. Phys. Lett. 74, 70 (1999).
11. J. S. Kwak, K. Y. Lee, J. Y. Han, J. Cho, S. Chae, O. H. Nam, and Y. Park, Appl. Phys. Lett. 79, 3254 (2001).
12. S. H. Wang, S. E. Mohney, and R. Birkhahn, J. Appl. Phys. 91, 3711 (2002).
13. M. Asif Khan, M. S. Shur, and Q. Chen, Appl. Phys. Lett. 68, 3022 (1996).
14. Y.-L. Li, E. F. Schubert, J. W. Graff, A. Osinsky, and W. F. Schaff, Appl. Phys. Lett. 76, 2728 (2000).
15. D. Qiao, L. S. Yu, L. Jia, P. M. Asbeck, S. S. Lau, and T. E. Haynes, Appl. Phys. Lett. 80, 992 (2002).
16. M. Suzuki, T. Kawakami, T. Arai, S. Kobayashi, Y. Koide, T. Uemura, N. Shibata, and M. Murakami, Appl. Phys. Lett. 74, 275 (1999).
17. D.-H. Youn, M. Hao, H. Sato, T. Sugahara, Y. Naoi, and S. Sakai, Jpn. J. Appl. Phys., Part 1 37, 1768 (1998).
18. L.-C. Chen, C.-Y. Hsu, W.-H. Lan, and S.-Y. Teng, Solid-State Electron. 47, 1843 (2003).
19. J. O. Song, D.-S. Leem, and T.-Y. Seong, Appl. Phys. Lett. 83, 3513 (2003).
20. G. S. Marlow and M. B. Das, Solid-State Electron. 25, 91 (1982).
21. R. H. Horng, D.-S. Wuu, Y.-C. Lien, and W.-H. Lan, Appl. Phys. Lett. 79, 2925 (2001).