Influence of Extended Structural Defects on the Characteristics of Electroluminescence in Efficient Silicon Light-Emitting Diodes

Solid State Phenomena

Volumn 95-96, Issue , 2004, Pages 283-288

  Sobolev, N A ^a   Emel'yanov, A M ^a   Shek, E I ^a   Vdovin, V I ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b Inst Chem Prob of Microelectron   (Russian Federation)

Author keywords

Annealing; Electroluminescence; Extended Defects; Ion Implantation; Light Emitting Diodes; Quantum Efficiency; Single Crystal Silicon

Indexed keywords

ANNEALING; CHARGE CARRIERS; CONCENTRATION (PROCESS); DEFECTS; DIFFUSION; DOPING (ADDITIVES); ELECTROLUMINESCENCE; IMPURITIES; ION IMPLANTATION; QUANTUM EFFICIENCY; SUBSTRATES;

CARRIER LIFETIME; CARRIER RECOMBINATION; DISLOCATION LOOPS;

LIGHT EMITTING DIODES;

EID: 1642560907     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

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