Cross-sectional electron-beam-induced current analysis of the passivation of extended defects in cast multicrystalline silicon by remote hydrogen plasma treatment

Applied Physics Letters

Volumn 76, Issue 6, 2000, Pages 697-699

  Vyvenko, O F ^a   Kruger O ^a   Kittler, M ^a  

^a IHP   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000083799     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.125865     Document Type: Article

References (13)

1. C. H. Seager, D. J. Sharp, J. K. G. Panitz, and J. I. Hanoka, J. Phys. (France) 43, C1-103 (1982).
2. J. I. Hanoka, C. H. Seager, D. J. Sharp, and J. K. G. Panitz, Appl. Phys. Lett. 42, 618 (1983).
3. J. I. Hanoka, C. E. Dubé, and D. B. Sandstrom, Mater. Res. Soc. Symp. Proc. 46, 553 (1985).
4. P. Sana, A. Rohatgi, J. P. Kalejs, and R. O. Bell, Appl. Phys. Lett. 64, 97 (1994).
5. E-MRS 1998 Spring Meeting, Symposium A: Defects in Silicon: Hydrogen, edited by J. Weber and A. Mesli, Mater. Sci. Eng. B, 58 (1999).
6. M. Kittler, W. Seifert, and K.-W. Schröder, Phys. Status Solidi A 93, K101 (1986).
7. V. Higgs and M. Kittler, Appl. Phys. Lett. 65, 2804 (1994).
8. C. Donolato, Mater. Sci. Eng., B 24, 61 (1994).
9. O. F. Vyvenko, O. Krüger, and M. Kittler (unpublished).
10. M. Kittler, C. Ulhaq-Bouillet, and V. Higgs, J. Appl. Phys. 78, 4573 (1995).
11. M. Kittler, V. Kveder, and W. Schröter, Solid State Phenom. 69-70, 417 (1999).
12. S. J. Pearton, J. W. Corbett, and M. Stavola, Hydrogen in Crystalline Semiconductors, Springer Series in Materials Science, Vol. 16 (Springer, Berlin, 1992).
13. D. Ballutaud, L. Lusson, A. Boutry-Forveille, and A. Lusson, Solid State Phenom. 69-70, 571 (1999).