Analysis of local electrical properties of grain boundaries in Si by electron-beam-induced-current techniques

Journal of Physics Condensed Matter

Volumn 14, Issue 48, 2002, Pages 13161-13168

  Pandelov, S ^a   Seifert, W ^a,b   Kittler, M ^a,b   Reif, J ^a  

^a BRANDENBURG UNIVERSITY OF TECHNOLOGY   (Germany)

^b IHP   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC PROPERTIES; ELECTRON BEAMS; GRAIN BOUNDARIES; NUMERICAL METHODS; THERMAL EFFECTS;

ELECTRON BEAM INDUCED CURRENT TECHNIQUES; MULTICRYSTALLINE SILICON;

SILICON;

EID: 0037122065     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/14/48/364     Document Type: Article

References (10)

1. Kittler M, Ulhaq-Bouillet C and Higgs V 1995 J. Appl. Phys. 78 4573
2. Kveder V. Kittler M and Schröter W 2001 Phys. Rev. B 63 115208
3. Marfaing Y and Maurice J L 1991 Polycrystalline Semiconductors vol 2 (Berlin: Springer) p 205
4. Marek J 1982 J. Appl. Phys. 53 1454
5. Donolato C 1983 J. Appl. Phys. 54 1314
6. Palm J 1993 J. Appl. Phys. 74 1169
7. Mataré H F and Laaksoo C W 1968 Appl. Phys. Lett. 13 216
8. Kittler M and Lärz J 1998 Solid State Phenom. 63-64 77
9. Sze S M 1981 Physics of Semiconductor Devices (New York: Wiley)
10. Werner J H 1994 Solid State Phenom. 37-38 213