Origin of anomalous temperature dependence and high efficiency of silicon light-emitting diodes

Applied Physics Letters

Volumn 83, Issue 19, 2003, Pages 3885-3887

  Sun, J M ^a   Dekorsy, T ^a   Skorupa, W ^a   Schmidt, B ^a   Helm, M ^a  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BORON; ELECTRIC EXCITATION; ELECTRIC POTENTIAL; ELECTROLUMINESCENCE; ELECTRON TRANSITIONS; EXCITONS; HIGH TEMPERATURE EFFECTS; ION IMPLANTATION; SILICON; SOLUBILITY;

ELECTRON HOLE PAIRS; POWER EFFICIENCY;

LIGHT EMITTING DIODES;

EID: 0344083504     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1626809     Document Type: Article

References (13)

1. A. Polman, Nat. Mater. 1, 10 (2002).
2. L. Pavesi, J. Phys.: Condens. Matter 15, R1169 (2003).
3. M. A. Green, J. Zhao, A. Wang, P. J. Reece, and M. Gal, Nature (London) 412, 805 (2001).
4. W. L. Ng, M. A. Lourenço, R. M. Gwilliam, S. Ledain, G. Shao, and K. P. Homewood, Nature (London) 410, 192 (2001).
5. A. M. Emel'yanov, N. A. Sobolev, T. M. Mel'nikova, and S. Pizzini, Semiconductors 37, 730 (2003).
6. J. M. Sun, T. Dekorsy, W. Skorupa, B. Schmidt, and M. Helm, Appl. Phys. Lett. 82, 2823 (2003).
7. H. Weman, B. Monemar, G. S. Oehrlein, and S. J. Jeng, Phys. Rev. B 42, 3109 (1990).
8. J. M. Sun, T. Dekorsy, W. Skorupa, B. Schmidt, A. Mücklich, and M. Helm (unpublished).
9. S. Solmi, F. Baruffaldi, and R. Canteri, J. Appl. Phys. 69, 2135 (1991).
10. S. Solmi, E. Landi, and F. Baruffaldi, J. Appl. Phys. 68, 3250 (1990).
11. G. Davies, Phys. Rep. 176, 83 (1989).
12. V. V. Kveder, E. A. Steinman, S. A. Shevchenko, and H. G. Grimmeiss, Phys. Rev. B 51, 10520 (1995).
13. M. E. Castagna, S. Coffa, M. Monaco, A. Muscara', L. Caristia, S. Lorenti, and A. Messina, Mater. Res. Soc. Symp. Proc. 770, I2.1.1 (2003).