An efficient room-temperature silicon-based light-emitting diode

Nature

Volumn 410, Issue 6825, 2001, Pages 192-194

  Ng, Wai Lek ^a   Lourenco M A ^a   Gwilliam, R M ^a   Ledain, S ^b   Shao, G ^b   Homewood, K P ^a  

^a Bangor University Dean Street   (United Kingdom)

^b UNIVERSITY OF SURREY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; SILICON;

ARTICLE; ELECTROCHEMISTRY; ENVIRONMENTAL TEMPERATURE; LIGHT EMITTING DIODE; LUMINESCENCE; PRIORITY JOURNAL;

EID: 0035826195     PISSN: 00280836     EISSN: None     Source Type: Journal    
DOI: 10.1038/35065571     Document Type: Article

References (10)

1. Silicon-based visible light-emitting devices integrated into microelectronic circuits
2. 2/Si superlattices
3. 2 formed by ion implantation
4. Room-temperature sharp line electroluminescence at λ = 1.54 μm from an erbiumdoped, silicon light-emitting diode
5. Room-temperature SiGe light-emitting diodes
6. A silicon/iron disilicide light-emitting diode operating at a wavelength of 1.5 μm
7. Intrinsic band-edge photoluminescence from silicon clusters at room temperature
8. Room temperature electroluminescence from dislocation rich silicon