High rate (∼3 nm/s) deposition of dense silicon nitride films at low substrate temperatures (<150 °c) using the expanding thermal plasma and substrate biasing

Thin Solid Films

Volumn 484, Issue 1-2, 2005, Pages 46-53

  Van Assche, F J H ^a,b   Kessels, W M M ^a   Vangheluwe, R ^b   Mischke, W S ^b   Evers, M ^b   Van De Sanden, M C M ^a  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b OTB Engineering BV   (Netherlands)

Author keywords

Low substrate temperature; Plasma processing and deposition; Silicon nitride; Substrate biasing

Indexed keywords

ELECTRIC POTENTIAL; ELLIPSOMETRY; ION BOMBARDMENT; LOW TEMPERATURE EFFECTS; MOISTURE; OXYGEN; PLASMAS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON NITRIDE; SUBSTRATES; THIN FILMS;

FILM DENSITY; LOW SUBSTRATE TEMPERATURE; PLASMA PROCESSING AND DEPOSITION; SUBSTRATE BIASING;

DEPOSITION;

EID: 19844374116     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.01.095     Document Type: Article

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