Compositional analysis of thin SiO xN y:H films by heavy-ion ERDA, standard RBS, EDX and AES: A comparison

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 217, Issue 2, 2004, Pages 237-245

  Bohne, W ^a,b   Rohrich J ^a,b   Schopke A ^a,b   Selle, B ^a,b   Sieber, I ^a,b   Fuhs, W ^a,b   Del Prado, A ^c   San Andres E ^c   Martil I ^c   Gonzalez Diaz G ^c  

^a HAHN MEITNER INSTITUT   (Germany)

^b Ionenstrahl Labor   (Germany)

^c UNIVERSIDAD COMPLUTENSE DE MADRID   (Spain)

Author keywords

Auger electron spectroscopy; Elastic recoil detection analysis; Electron cyclotron resonance plasma deposition; Energy dispersive X ray analysis; Rutherford backscattering; Silicon oxynitride; Thin film characterisation

Indexed keywords

ELASTIC RECOIL DETECTION ANALYSIS; ELECTRON CYCLOTRON RESONANCE PLASMA DEPOSITION; SILICON OXYNITRIDE; THIN FILM CHARACTERIZATION;

AUGER ELECTRON SPECTROSCOPY; CHEMICAL VAPOR DEPOSITION; ELECTRON CYCLOTRON RESONANCE; ELLIPSOMETRY; ENERGY DISPERSIVE SPECTROSCOPY; ERROR ANALYSIS; HEAVY IONS; HYDROGEN; ION BEAMS; KRYPTON; PERMITTIVITY; REFRACTIVE INDEX; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON COMPOUNDS;

THIN FILMS;

EID: 10744230112     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2003.11.003     Document Type: Article

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