The electrical and interface properties of metal-ferroelectric (lanthanum substituted bismuth titanate: BLT)-insulator-semiconductor (MFIS) structures with various insulators

Journal of Materials Science

Volumn 42, Issue 2, 2007, Pages 652-659

  Kang, S W ^a   Kim, W K ^a   Rhee, S W ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC INSULATORS; FERROELECTRIC MATERIALS; LANTHANUM ALLOYS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY SPECTROSCOPY;

BISMUTH TITANATE (BLT); FERROELECTRIC LAYERS; LANTHANUM OXIDES (LO); METAL FERROELECTRIC INSULATOR SEMICONDUCTORS (MFIS);

SEMICONDUCTOR MATERIALS;

EID: 33846840807     PISSN: 00222461     EISSN: 15734803     Source Type: Journal    
DOI: 10.1007/s10853-006-1136-y     Document Type: Article

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