Epitaxial growth of Bi4Ti3O12/CeO2/Ce0.12Zr0.88O2 and Bi4Ti3O12/SrTiO3/Ce0.12Zr0.88O2 thin films on Si and its application to metal-ferroelectric-insulator-semiconductor diodes

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 9 B, 2000, Pages 5505-5511

  Migita, Shinji ^a   Xiong, Si Bei ^a   Sakamaki, Kazuo ^a,b   Ota, Hiroyuki ^a   Tarui, Yasuo ^a   Sakai, Shigeki ^a  

^a ELECTROTECHNICAL LABORATORY   (Japan)

^b Shiobara Technology Center   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CERIUM COMPOUNDS; CRYSTAL ORIENTATION; ELECTRIC VARIABLES MEASUREMENT; ELECTROMAGNETIC WAVE POLARIZATION; EPITAXIAL GROWTH; FERROELECTRIC THIN FILMS; MOLECULAR BEAM EPITAXY; PULSED LASER DEPOSITION; SEMICONDUCTOR DIODES; SILICON; STRONTIUM COMPOUNDS; X RAY DIFFRACTION ANALYSIS;

ANISOTROPIC POLARIZATION; BISMUTH TITANATE; CAPACITANCE VOLTAGE CHARACTERISTICS; CERIUM DIOXIDE; CERIUM ZIRCONATE; METAL FERROELECTRIC INSULATOR SEMICONDUCTOR DIODES; STRONTIUM TITANATE;

BISMUTH COMPOUNDS;

EID: 0034262651     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.5505     Document Type: Article

References (29)

1. J. L. Moll and Y. Tarui: IEEE Trans. Electron Devices ED-10 (1963) 338.
2. T. Hirai, Y. Fujisaki, K. Nagashima, H. Koike and Y. Tarui: Jpn. J. Appl. Phys. 36 (1997) 5908.
3. Y. Fujimori, T. Nakamura and A. Kamisawa: Jpn. J. Appl. Phys. 38 (1999) 2285.
4. E. Tokumitsu, G. Fujii and H. Ishiwara: Ext. Abstr. 1999 Int. Conf. Solid Slate Devices and Materials, Tokyo (Business Center for Academic Societies, Japan, Tokyo, 1999) p. 404.
5. Abstr. 12th Int. Symp. Integrated Ferroclectrics (Aachen, Germany 2000).
6. R. Ramesh, A. Inam, W. K. Chan, B. Wilkens, K. Myers, K. Remshing, D. L. Hart and J. M. Tarascon: Science 252 (1991) 944.
7. H. Mori and H. Ishiwara: Jpn. J. Appl. Phys. 30 (1991) L1415.
8. D. K. Fork, F. A. Ponce, J. C. Tramontana and T. H. Geballe: Appl. Phys. Lett. 58 (1991) 2294.
9. R. A. McKee, F. J. Walker, J. R. Conner and E. D. Specht: Appl. Phys. Lett. 59 (1991) 782.
10. R. Ramesh, A. Inam, B. Wilkens, W. K. Chan, T. Sands, D. K. Fork, T. H. Geballe, J. Evans and J. Bullington: Appl. Phys. Lett. 59 (1991) 1782.
11. J. Wecker, T. H. Matthee, H. Behner, G. Friedel and K. Samwer: Mater. Res. Symp. Proc. 275 (1992) 107.
12. E. J. Tarsa, K. L. McCormick and J. S. Speck: Mater. Res. Soc. Proc. 341 (1994) 73.
13. S. G. Ghonge, E. Goo, R. Ramesh, R. Haakenaasen and D. K. Fork: Appl. Phys. Lett. 64 (1994) 3407.
14. E. Tokumitsu, K. Itani, B.-M. Moon and H. Ishiwara: Jpn. J. Appl. Phys. 34 (1995) 5202.
15. I. Sakai, E. Tokumitsu and H. Ishiwara: Jpn. J. Appl. Phys. 35 (1996) 4987.
16. T. Hirai, K. Teramoto, K. Nagashima, H. Koike, S. Matsuno, S. Tanimoto and Y. Tarui: Jpn. J. Appl. Phys. 35 (1996) 4016.
17. T. Hirai, K. Nagashima, H. Koike, S. Matsuno and Y. Tarui: Jpn. J. Appl. Phys. 35 (1996) 5150.
18. T. Hirai, K. Teramoto, H. Koike, K. Nagashima and Y. Tarui: Jpn. J. Appl. Phys. 36 (1997) 5253.
19. T. Yoshimura, N. Fujimura, N. Aoki, K. Hokayama, S. Tsuki, K. Kawabata and T. Ito: Jpn. J. Appl. Phys. 36 (1997) 5921.
20. J. F. Scott, M. Alexe, N. D. Zakharov, A. Pignolet, C. Curran and D. Hesse: Integr. Ferroelectr. 21 (1998) 1.
21. S. Imada, S. Shouriki, E. Tokumitsu and H. Ishiwara: Jpn. J. Appl. Phys. 37 (1998) 6497.
22. B.-E. Park, S. Shouriki, E. Tokumitsu and H. Ishiwara: Jpn. J. Appl. Phys. 37 (1998) 5154.
23. R. A. McKee, F. J. Walker and M. F. Chisholm: Phys. Rev. Lett. 81 (1998) 3014.
24. S. Migita, T. Ucsugi, H. Kishi, T. Hirai, S. Sakai and Y. Tarui: Jpn. J. Appl. Phys. 38 (1999) 5411.
25. K. Eisenbeiser, J. M. Finder, Z. Yu, J. Ramdani, J. A. Curless, J. A. Hallmark, R. Droopad, W. J. Ooms, L. Salem, S. Bradshaw and C. D. Overgaard: Appl. Phys. Lett. 76 (2000) 1324.
26. M. E. Hunter, M. J. Reed, N. A. El-Masry, J. C. Roberts and S. M. Bedair: Appl. Phys. Lett. 76 (2000) 1935.
27. S. Migita, H. Ota, H. Fujino, Y. Kasai and S. Sakai: J. Cryst. Growth 200 (999) 161.
28. L. M. Terman: Solid-State Electron. 5 (1962) 285.
29. K. Eisenbeiser, J. M. Finder, Z. Yu, J. Ramdani, J. A. Curless, J. A. Hallmark, R. Droopad, W. J. Ooms, L. Salem, S. Bradshaw and C. D. Overgaard: Appl. Phys. Lett. 76 (2000) 1324.