-
1
-
-
32444450677
-
Semiconductive translating device
-
U. S. Patent 2 791 758, May 7
-
D. H. Looney, “Semiconductive translating device,” U. S. Patent 2 791 758, May 7, 1957.
-
(1957)
-
-
Looney, D.H.1
-
2
-
-
32444437774
-
Semiconductive device
-
U. S. Patent 2 791 759, May 7
-
W. L. Brown, “Semiconductive device,” U. S. Patent 2 791 759, May 7, 1957.
-
(1957)
-
-
Brown, W.L.1
-
3
-
-
32444450677
-
Semiconductive translating device
-
U. S. Patent 2 791 760. May 7
-
I. M. Ross, “Semiconductive translating device,” U. S. Patent 2 791 760. May 7, 1957.
-
(1957)
-
-
Ross, I.M.1
-
4
-
-
32444445716
-
Electrical switching and storage
-
U. S. Patent 2 791 761, May 7
-
J. A. Morton, “Electrical switching and storage,” U. S. Patent 2 791 761, May 7, 1957.
-
(1957)
-
-
Morton, J.A.1
-
5
-
-
3342974903
-
Changing properties of metals by ferroelectric polarization charging
-
H. L. Stadler, “Changing properties of metals by ferroelectric polarization charging,” Phys. Rev. Lett., vol. 14, pp. 979–981, 1965.
-
(1965)
Phys. Rev. Lett.
, vol.14
, pp. 979-981
-
-
Stadler, H.L.1
-
7
-
-
0007011039
-
Effect of ferroelectric polarization on insulated-gate thin film transistor parameters
-
R. Zuleeg and H. H. Wieder, “Effect of ferroelectric polarization on insulated-gate thin film transistor parameters,” Solid-State Electron. vol. 9, pp. 657–661, 1966.
-
(1966)
Solid-State Electron
, vol.9
, pp. 657-661
-
-
Zuleeg, R.1
Wieder, H.H.2
-
8
-
-
84938438304
-
A ferroelectric field effect device
-
June
-
P. H. Hyman and G. H. Heilmeier, “A ferroelectric field effect device,” Proc. IEEE, vol. 54, pp. 842–848, June 1966.
-
(1966)
Proc. IEEE
, vol.54
, pp. 842-848
-
-
Hyman, P.H.1
Heilmeier, G.H.2
-
9
-
-
84938014073
-
Effect of ferroelectric polarization fields on semiconductor films
-
(V. Dvorak, A. Fouskova, and P. Glogar, Eds., Prague, Czechoslovakia)
-
P. Buckman and H. Diamond, “Effect of ferroelectric polarization fields on semiconductor films,” in Proc. Int. Meet. Ferroelectricity, (V. Dvorak, A. Fouskova, and P. Glogar, Eds., Prague, Czechoslovakia), vol. 2, pp. 313–325, 1966.
-
(1966)
Proc. Int. Meet. Ferroelectricity
, vol.2
, pp. 313-325
-
-
Buckman, P.1
Diamond, H.2
-
12
-
-
0010695407
-
Non-destructive readout of ferroelectrics by field effect conductivity modulation
-
G. G.Teather and L. Young, “Non-destructive readout of ferroelectrics by field effect conductivity modulation,” Solid State Electron., vol. 11, pp. 527–533, 1968.
-
(1968)
Solid State Electron.
, vol.11
, pp. 527-533
-
-
Teather, G.G.1
Young, L.2
-
13
-
-
0009188101
-
Ceramic ferroelectric field effect studies
-
June
-
J. C. Crawford and F. L. English, “Ceramic ferroelectric field effect studies,” IEEE Trans. Electron Devices, vol. ED-16, PP. 525–532, June 1969.
-
(1969)
IEEE Trans. Electron Devices
, vol.ED-16
, pp. 525-532
-
-
Crawford, J.C.1
English, F.L.2
-
14
-
-
3042874313
-
Ferroelectric field effect studies at low temperatures
-
J. C. Crawford, “Ferroelectric field effect studies at low temperatures,” Ferroelectrics, vol. 22, pp. 23–30, 1970.
-
(1970)
Ferroelectrics
, vol.22
, pp. 23-30
-
-
Crawford, J.C.1
-
15
-
-
49949132400
-
A small scale radio frequency sputtering apparatus
-
T. Putner, “A small scale radio frequency sputtering apparatus,” Thin Solid Films, vol. 1, pp. 165–169, 1967.
-
(1967)
Thin Solid Films
, vol.1
, pp. 165-169
-
-
Putner, T.1
-
16
-
-
84914654777
-
Ferroelectricity 0: barium titanate thin films of less than one micron thickness
-
R. Vu Huy Dat and C. Baumberger, “Ferroelectricity 0: barium titanate thin films of less than one micron thickness,” Phys. Status Solidi, vol. 22, pp. K67–K70, 1967.
-
(1967)
Phys. Status Solidi
, vol.22
, pp. K67-K70
-
-
Vu Huy Dat, R.1
Baumberger, C.2
-
17
-
-
0043191175
-
Fabrication of rf-sputterec. barium titanate thin films
-
I. H. Pratt and S. Firestone, “Fabrication of rf-sputterec. barium titanate thin films,” J. Vac. Sci. Technol., vol. 8, pp 256–260, 1971.
-
(1971)
J. Vac. Sci. Technol.
, vol.8
, pp. 256-260
-
-
Pratt, I.H.1
Firestone, S.2
-
18
-
-
0015063937
-
BaTiOs, films prepared by rf sputtering on to lnSb or GaAs
-
S. Iida and S. Kataoka, “BaTiOs, films prepared by rf sputtering on to lnSb or GaAs,” Appl. Phys. Lett., vol. 18, pp. 391–392 1971.
-
(1971)
Appl. Phys. Lett.
, vol.18
, pp. 391-392
-
-
Iida, S.1
Kataoka, S.2
-
19
-
-
0040225683
-
Preparation and epitaxy of sputtered films of ferroelectric Bi4Ti8012
-
W. J. Takei, N. P. Formigoni, and M. H. Francombe, “Preparation and epitaxy of sputtered films of ferroelectric Bi4Ti8012,” J. Vacuum Sci. Technol., vol. 7, pp. 442–448, 1970.
-
(1970)
J. Vacuum Sci. Technol.
, vol.7
, pp. 442-448
-
-
Takei, W.J.1
Formigoni, N.P.2
Francombe, M.H.3
-
20
-
-
0015317005
-
Domain structure and polarization reversal in films of ferroelectric bismuth titanate
-
Apr.
-
S. Y. Wu, W. J. Takei, M. H. Francombe, and S. E. Cummins, “Domain structure and polarization reversal in films of ferroelectric bismuth titanate,” IEEE Trans. Sonics Ultrason., vol. SU-19, PP. 217–224, Apr. 1972.
-
(1972)
IEEE Trans. Sonics Ultrason.
, vol.SU-19
, pp. 217-224
-
-
Wu, S.Y.1
Takei, W.J.2
Francombe, M.H.3
Cummins, S.E.4
-
21
-
-
21544455161
-
Electro-optic contrast observations in single-domain epitaxial films of bismuth titanate
-
S. Y. Wu, W. J. Takei, and M. H. Francombe, “Electro-optic contrast observations in single-domain epitaxial films of bismuth titanate,” Appl. Phys. Lett., vol. 22, pp. 26–28, 1973.
-
(1973)
Appl. Phys. Lett.
, vol.22
, pp. 26-28
-
-
Wu, S.Y.1
Takei, W.J.2
Francombe, M.H.3
-
22
-
-
84938015081
-
Performance of sputtered Pb0.92Bi0.07La0.01 (Fe0.405Nb0.325Zr0.27)O3 ferroelectric memory films
-
Apr.
-
R. B. Atkin, “Performance of sputtered Pb0.92Bi0.07La0.01 (Fe0.405Nb0.325Zr0.27)O3 ferroelectric memory films,” IEEE Trans. Sonics Ultrason., vol. SU-19, pp. 213–215, Apr. 1972.
-
(1972)
IEEE Trans. Sonics Ultrason.
, vol.SU-19
, pp. 213-215
-
-
Atkin, R.B.1
-
23
-
-
0015434780
-
Ferroelectric films and their device applications
-
M. H. Francombe, “Ferroelectric films and their device applications,” Thin Solid Films, vol. 13, pp. 413–433, 1972.
-
(1972)
Thin Solid Films
, vol.13
, pp. 413-433
-
-
Francombe, M.H.1
-
24
-
-
0001168443
-
The preparation and C-V characteristics of Si-Si3N4 and Si-SiO2-Si3N4 structures
-
T. L. Chu, J. R. Szedon, and C. H. Lee, “The preparation and C-V characteristics of Si-Si3N4 and Si-SiO2-Si3N4 structures,” Solid-State Electron., vol. 10, pp. 897–905, 1967.
-
(1967)
Solid-State Electron.
, vol.10
, pp. 897-905
-
-
Chu, T.L.1
Szedon, J.R.2
Lee, C.H.3
-
26
-
-
0001089954
-
RF sputtered strontium titanate films
-
W. B. Pennebaker, “RF sputtered strontium titanate films,” IBM J. Res. Develop., vol. 15, pp. 686–695, 1969.
-
(1969)
IBM J. Res. Develop.
, vol.15
, pp. 686-695
-
-
Pennebaker, W.B.1
-
27
-
-
21544468235
-
Electrical and optical properties of ferroelectric Bi4Ti3O12 single crystals
-
Apr.
-
S. E. Cummins and L. E. Cross, “Electrical and optical properties of ferroelectric Bi4Ti3O12 single crystals,” J. Appl. Phys., vol. 39, pp. 2268–2274, Apr. 1968.
-
(1968)
J. Appl. Phys.
, vol.39
, pp. 2268-2274
-
-
Cummins, S.E.1
Cross, L.E.2
-
28
-
-
0000375826
-
Bismuth titanate, a ferroelectric
-
May
-
L. G. Van Uitert and L. Egerton, “Bismuth titanate, a ferroelectric,” J. Appl. Phys., vol. 32, p. 959, May 1961.
-
(1961)
J. Appl. Phys.
, vol.32
, pp. 959
-
-
Van Uitert, L.G.1
Egerton, L.2
|