Epitaxial BaTiO3 films on silicon for MFSFET applications

Integrated Ferroelectrics

Volumn 27, Issue 1, 1999, Pages 41-50

  Hallmark, Jerry ^a   Yu, Zhiyi ^a   Droopad, Ravi ^a   Ramdani, Jamal ^a   Curless, Jay ^a   Overgaard, Corey ^a   Finder, Jeff ^a   Marshall, Dan ^a   Wang, Jun ^a   Ooms, Bill ^a  

^a Phoenix Corporation Research Laboratories   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; BARIUM TITANATE; FIELD EFFECT TRANSISTORS; HYSTERESIS; INTERFACES (MATERIALS); LEAKAGE CURRENTS; MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING SILICON; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

BARIUM TITANATE FILM; METAL FERROELECTRIC SEMICONDUCTOR FIELD EFFECT TRANSISTOR;

DIELECTRIC FILMS;

EID: 0033339693     PISSN: 10584587     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1080/10584589908228454     Document Type: Article

References (5)

1. D. H. Looney, U.S. Patent No. 2,791,758.
2. B. Hoerman, G. Ford, L. Kaufman, B. Wessels, ISIF 98, p. 102C.
3. R. A. McKee, F.J. Walker, M.F. Chisholm, Phys. Rev. Letters, 81(14), p. 3014.
4. J. Lyu, J. Jeong, K. Kim, B. Kim, H. J. Yo, ETRI Journal 20 (2), p.241-8.
5. H. Mori, H. Ishiwara, Jap. J. App. Physics. Part 2 (Letters) 30 (8A), p.1415-17.