Characteristics of metal/ferroelectric/insulator/semiconductor field effect transistors using a Pt/SrBi2Ta2O9/Y2O3/Si structure

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 3 SUPPL. B, 1998, Pages 1107-1109

  Lee, Ho Nyung ^a,b   Lim, Myoung Ho ^c   Kim, Yong Tae ^a   Kalkur, T S ^c   Choh, Sung Ho ^b  

^a Korea Institute of Science and Technology   (South Korea)

^b Korea University   (South Korea)

^c Department of Environmental and Radiological Health Sciences   (United States)

Author keywords

Ferroelectric; FET; Insulator; MEFIS; SrBi2Ta2O9; Thin film; Y2O3

Indexed keywords

EID: 0001404592     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.1107     Document Type: Article

References (10)

1. T. Nakamura, Y. Nakao, A. Kamisawa and H. Takasu: Integr. Ferroelectr. 11 (1995) 161.
2. D. Y. Chen, M. Azuma, L. D. McMillan and C. A-Paz de Araujo: Proc. 9th IEEE Int. Symp. Application of Ferroelectrics (1995) p. 25.
3. R. Lohkamper and H. Neumann: J. Appl. Phys. 68 (1990) 4220.
4. C. A-Paz de Araujo, J. D. Cushiaro, L. D. McMillan, M. C. Scott and J. F. Scott: Nature 374 (1995) 627.
5. J. F. Scott, F. M. Ross, C. A-Paz de Araujo, M. C. Scott and M. Huffman: Mater. Res. Bull. 21 (1996) 33.
6. M. Lim, H. N. Lee, Y. T. Kim, and S. H. Choh: 9th Int. Meet. Ferroelectricity (1997) Abstract Book p. 147.
7. D. S. Shin, H. N. Lee, C. W. Lee, I. H. Choi, and Y. T. Kim: 9th Int. Meet. Ferroelectricity (1997) Abstract Book, p. 61.
8. M. Lim and T. S. Kalkur: Integr. Ferroelectr. 14 (1997) 247.
9. I. Sakai, E. Tokumitu and H. Ishiwara: Jpn. J. Appl. Phys. 35 (1996) 4987.
10. T. Hirai, K. Nagashima, H. Koike, S. Matsuno and Y. Tarui: Jpn. J. Appl. Phys. 35 (1996) 5150.