MFMOS capacitor with Pb5Ge3O11 thin film for one transistor ferroelectric memory applications

Materials Research Society Symposium - Proceedings

Volumn 596, Issue , 2000, Pages 443-448

  Li, T K ^a   Hsu, S T ^a   Lee, J J ^a,c   Gao, Y F ^b   Engelhard, M ^b  

^a SHARP LABORATORIES OF AMERICA   (United States)

^b PACIFIC NORTHWEST NATIONAL LABORATORY   (United States)

^c MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION; ELECTRIC POTENTIAL; ELECTROMAGNETIC WAVE POLARIZATION; FERROELECTRIC DEVICES; FERROELECTRIC MATERIALS; GERMANIUM COMPOUNDS; LEAD COMPOUNDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PERMITTIVITY; SUBSTRATES; THIN FILMS; TRANSISTORS;

DEPOLARIZATION; FERROELECTRIC CAPACITOR; FERROELECTRIC THIN FILM; GERMANIUM ETHOXIDE; LEAD BISTETRAMETHYLHEPTADIONE; METAL FERROELECTRIC METAL OXIDE SILICON CAPACITOR; ONE TRANSISTOR FERROELECTRIC MEMORY; REMANENT POLARIZATION;

MOS CAPACITORS;

EID: 0033710407     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)

1. H. Iwasaki, K. Sugii, T. Yamada, and N. Niizeki, Appl. Phys. Lett. 18, 444 (1971).
2. Ramtron Corporation (Colorado Springs, CO) started introducing its 4Kbit, 8Kbit, and 16Kbit FRAMs in 1988.
3. C.A. Paz de Araujb, J. D. Cuchiaro, L.D. McMillan, M.C. Scott & J.F. Scott, Nature, 374, 13, 627-629 (1995).
4. S.B. Desu and T.K. Li, Mat. Sci. and Eng. B 34, L4-L8 (1995).
5. T.K. Li, Y.F. Zhu, S.B. Desu, C.H. Peng, Mat. Res. Soc. Symp.Proc. vol.415, 189 (1996).
6. J.F. Chang and S.B. Desu, J. Mater. Res. 9, 955 (1994).
7. T.K. Li, Y.F. Zhu, S.B. Desu, C.H. Peng, and N. Masaya, Appl. Phys. Letters 68 (5), 616 (1997).
8. A. M. Glass, K. Nassau, and J. W. Shiever, J. Appl. Phys. 48, 5213 (1978).
9. A. Mansingh and S. B. Krupanidhi, J. Appl. Phys. 51, 5408 (1980).
10. H. Schmitt, H.E. Mueser, and R. Karthein, Ferroelectrics 56, 141 (1984).
11. Tingkai Li, Fengyan Zhang and Sheng Teng Hsu, Appl. Phys. Lett. 74 (2) 296 (1999).