Analytic Description of Short-Channel Effects in Fully-Depleted Double-Gate and Cylindrical, Surrounding-Gate MOSFETs

IEEE Electron Device Letters

Volumn 21, Issue 9, 2000, Pages 445-447

  Oh, Sang Hyun ^a   Monroe, Don ^a   Hergenrother, J M ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

Double gate MOSFET; MOSFET scaling; short channel effect; surrounding gate MOSFET

Indexed keywords

EID: 85008018770     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.863106     Document Type: Article

References (10)

1. R.-H. Yan, A. Ourmazd, and K. F. Lee, “Scaling the Si MOSFET: From bulk to SOI to bulk,” IEEE Trans. Electron Devices, vol. 39, pp. 1704-1710, July 1992.
2. K. Suzuki et al., “Scaling theory for double-gate SOI MOSFETs,” IEEE Trans. Electron Devices, vol. 40, pp. 2326-2329, Dec. 1993.
3. D. J. Frank, Y. Taur, and H.-S. P. Wong, “Generalized scale length for two-dimensional effects in MOSFETs,” IEEE Electron Device Lett., vol. 19, pp. 385-387, Oct. 1998.
4. D. Monroe and J. M. Hergenrother, “Evanescent-mode analysis of shortchannel effects in fully depleted SOI and related MOSFETs,” in Proc. Int. IEEE SOI Conf., Oct. 1998, pp. 157-158.
5. J. C. S. Woo, K. W. Terrill, and P. K. Vasudev, “Two-dimensional analytic modeling of very thin SOI MOSFETs,” IEEE Trans. Electron Devices, vol. 37, pp. 1999-2005, Sept. 1990.
6. T. N. Nguyen, “Small-geometry MOS transistors: Physics and modeling of surface- and buried-channel MOSFETs,” Ph.D. dissertation, Stanford Univ., Stanford, CA, 1984.
7. M. R. Pinto et al., “Three-dimensional characterization of bipolar transistors in a submicron BiCMOS technology using integrated process and device simulation,” in IEDM Tech. Dig, 1992, pp. 923-926.
8. H. Takato et al., “Impact of surrounding gate transistor (SGT) for ultrahigh-density LSIs,” IEEE Trans. Electron Devices, vol. 38, pp. 573-577, Mar. 1991.
9. J. D. Jackson, Classical Electrodynamics. New York:Wiley, 1975, ch. 3.
10. C. P. Auth and J. D. Plummer, “Scaling theory for cylindrical, fully-depleted, surrounding-gate MOSFETs,” IEEE Electron Device Lett., vol. 18, pp. 74-76, Feb. 1997.