Electron and hole mobility in silicon at large operating temperatures - Part I: Bulk mobility

IEEE Transactions on Electron Devices

Volumn 49, Issue 3, 2002, Pages 490-499

  Reggiani, Susanna ^b   Valdinoci, Marina ^b   Colalongo, Luigi ^b   Rudan, Massimo ^a,b   Baccarani, Giorgio ^a,b   Stricker, Andreas D ^c   Illien, Fridolin ^c   Felber, Norbert ^c   Fichtner, Wolfgang ^a,c   Zullino, Lucia ^d  

^a IEEE

^b UNIVERSITY OF BOLOGNA   (Italy)

^c ETH ZURICH   (Switzerland)

^d STMICROELECTRONICS   (Italy)

Author keywords

Charge carrier mobility; Hall effect; High temperature measurements

Indexed keywords

COMPUTER SIMULATION; ELECTRON MOBILITY; HALL EFFECT; HIGH TEMPERATURE EFFECTS; HOLE MOBILITY; LATTICE CONSTANTS; MAGNETS;

BULK MOBILITY;

SEMICONDUCTING SILICON;

EID: 0036494552     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.987121     Document Type: Article

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