Modeling electrical characteristics of thin-film field-effect transistors. I. Trap-free materials

Synthetic Metals

Volumn 156, Issue 21-24, 2006, Pages 1305-1315

  Stallinga, P ^a   Gomes, H L ^a  

^a UNIVERSITY OF ALGARVE   (Portugal)

Author keywords

Amorphous silicon; Contact effects; Organic semiconductors; Sexithiophene; Thin film field effect transistors; Two dimensional electronics

Indexed keywords

AMORPHOUS SILICON; ELECTRIC PROPERTIES; FIELD EFFECT TRANSISTORS; SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILM DEVICES; THRESHOLD VOLTAGE;

CONTACT EFFECTS; SEXITHIOPHENE; THIN-FILM FIELD EFFECT TRANSISTORS; TWO-DIMENSIONAL ELECTRONICS;

MATHEMATICAL MODELS;

EID: 33846585524     PISSN: 03796779     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.synthmet.2006.09.015     Document Type: Article

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