Subthreshold and scaling of PtSi Schottky barrier MOSFETs

Superlattices and Microstructures

Volumn 28, Issue 5-6, 2000, Pages 501-506

  Calvet, L E ^a   Luebben, H ^a   Reed, M A ^a   Wang, C ^b   Snyder, J P ^b   Tucker, J R ^c  

^a YALE UNIVERSITY   (United States)

^b NATIONAL SEMICONDUCTOR CORPORATION   (United States)

^c UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; ELECTRIC CURRENTS; MATHEMATICAL MODELS; PLATINUM COMPOUNDS; SCHOTTKY BARRIER DIODES; THERMIONIC EMISSION;

PLATINUM SILICON SCHOTTKY BARRIER MOSFETS; SCALING; SUBTHRESHOLD;

MOSFET DEVICES;

EID: 0034317912     PISSN: 07496036     EISSN: None     Source Type: Journal    
DOI: 10.1006/spmi.2000.0954     Document Type: Article

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