Ambipolar Schottky-barrier TFTs

IEEE Transactions on Electron Devices

Volumn 49, Issue 2, 2002, Pages 264-270

  Lin, Horng Chih ^a,b   Yeh, Kuan Lin ^c   Huang, Tiao Yuan ^b,c   Huang, Ruo Gu ^a,c   Sze, Simon M ^a,b  

^a IEEE   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^c NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Ambipolar; Field induced drain; Schottky barrier; TFT

Indexed keywords

ACTIVE CHANNEL REGION; AMBIPOLAR; FIELD INDUCED DRAIN REGION; METAL FIELD PLATE; OFF STATE LEAKAGE CURRENT; ON OFF CURRENT RATIOS; PASSIVATION OXIDE; POLYSILICON ACTIVE LAYER; SCHOTTKY BARRIER METAL OXIDE SEMICONDUTOR THIN FILM TRANSISTOR; SILICIDE DRAIN;

CHEMICAL VAPOR DEPOSITION; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; INTEGRATED CIRCUIT MANUFACTURE; LEAKAGE CURRENTS; MOSFET DEVICES; OXIDES; PASSIVATION; POLYSILICON; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DEVICE MANUFACTURE;

THIN FILM TRANSISTORS;

EID: 0036475595     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.981216     Document Type: Article

References (14)

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10. Impacts of field-induced drain (FID) on the ambipolar operation of poly-Si Schottky-barrier thin-film transistors (SBTFT's)
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12. A simpler 100-V polysilicon TFT with improved turn-on characteristics
13. Device sensitivity of field-plated polysilicon high-voltage TFT's and their application to low-voltage operation