Electronic transport in field-effect transistors of sexithiophene

Journal of Applied Physics

Volumn 96, Issue 9, 2004, Pages 5277-5283

  Stallinga, P ^a   Gomes, H L ^a   Biscarini, F ^b   Murgia, M ^b   De Leeuw, D M ^c  

^a UNIVERSITY OF ALGARVE   (Portugal)

^b CNR   (Italy)

^c PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ELECTRIC POTENTIAL; ELECTRODES; FIELD EFFECT TRANSISTORS; GRAIN BOUNDARIES; INTERFACES (MATERIALS); SCHOTTKY BARRIER DIODES; THIN FILMS;

INORGANIC COUNTERPARTS; METASTABILITY; MEYER-NELDEL RULES; POOLE-FRENKEL DEPENDENCE;

ELECTRON TRANSPORT PROPERTIES;

EID: 9744265688     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1789279     Document Type: Article

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