Microscopic evidence for spatially inhomogeneous charge trapping in pentacene

Advanced Materials

Volumn 17, Issue 11, 2005, Pages 1410-1414

  Muller, Erik M ^b   Marohn, John A ^a  

^a Department of Obstetrics Gynecology   (United States)

^b Laboratory of Atomic and Solid State Physics and Sibley School of Mechanical and Aerospace Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CAPACITORS; DIELECTRIC MATERIALS; DOPING (ADDITIVES); ELECTRODES; ELECTROSTATICS; GRAIN BOUNDARIES; IMAGE ANALYSIS; NATURAL FREQUENCIES; POLYCRYSTALLINE MATERIALS; SILICA; THRESHOLD VOLTAGE;

CHARGE TRAPPING; ELECTRIC FORCE MICROSCOPY (EFM); GATE VOLTAGE; PENTACENE;

THIN FILM TRANSISTORS;

EID: 20444504759     PISSN: 09359648     EISSN: None     Source Type: Journal    
DOI: 10.1002/adma.200401174     Document Type: Article

References (27)

1. C. D. Dimitrakopoulos, I. Kymissis, S. Purushothaman, D. A. Neumayer, P. R. Duncombe, R. B. Laibowitz, Adv. Mater. 1999, 11, 1372.
2. H. Klauk, T. N. Jackson, Solid State Technol. 2000, 43, 63.
3. C. D. Dimitrakopoulos, P. R. L. Malenfant, Adv. Mater. 2002, 14, 99.
4. E. J. Meijer, D. M. D. Leeuw, S. Setayesh, E. V. Veenendaal, B. H. Huisman, P. W. M. Blom, J. C. Hummelen, U. Scherf, T. M. Klapwijk, Nat. Mater. 2003, 2, 678.
5. Y. Y. Lin, D. J. Gundlach, S. F. Nelson, T. N. Jackson, IEEE Electron Device Lett. 1997, 18, 606.
6. D. J. Gundlach, Y. Y. Lin, T. N. Jackson, S. F. Nelson, D. G. Schlom, IEEE Electron Device Lett. 1997, 18, 87.
7. Y. Y. Lin, D. J. Gundlach, S. F. Nelson, T. N. Jackson, IEEE Trans. Electron Devices 1997, 44, 1325.
8. D. J. Gundlach, T. N. Jackson, D. G. Schlom, S. F. Nelson, Appl. Phys. Lett. 1999, 74, 3302.
9. D. Knipp, R. A. Street, A. Volkel, J. Ho, J. Appl. Phys. 2003, 93, 347.
10. D. Knipp, R. A. Street, A. R. Volkel, Appl. Phys. Lett. 2003, 82, 3907.
11. Z. T. Zhu, J. T. Mason, R. Dieckmann, G. G. Malliaras, Appl. Phys. Lett. 2002, 81, 4643.
12. Y. Qiu, Y. C. Hu, G. F. Dong, L. D. Wang, J. F. Xie, Y. N. Ma, Appl. Phys. Lett. 2003, 83, 1644.
13. O. D. Jurchescu, J. Baas, T. T. M. Palstra, Appl. Phys. Lett. 2004, 84, 3061.
14. J. A. Nichols, D. J. Gundlach, T. N. Jackson, Appl. Phys. Lett. 2003, 83, 2366.
15. K. P. Puntambekar, P. V. Pesavento, C. D. Frisbie, Appl. Phys. Lett. 2003, 83, 5539.
16. A. R. Volkel, R. A. Street, D. Knipp, Phys. Rev. B 2002, 66, 347.
17. S. Verlaak, V. Arkhipov, P. Heremans, Appl. Phys. Lett. 2003, 82, 745.
18. R. A. Street, D. Knipp, A. R. Volkel, Appl. Phys. Lett. 2002, 80, 1658.
19. Y. S. Yang, S. H. Kim, J. I. Lee, H. Y. Chu, L. M. Do, H. Lee, J. Oh, T. Zyung, M. K. Ryu, M. S. Jang, Appl. Phys. Lett. 2002, 80, 1595.
20. M. Pope, C. E. Swenberg, Electronic Processes in Organic Crystals, Monographs in the Physics and Chemistry of Materials, Vol.39, Oxford University Press, New York 1982.
21. Y. J. Zhang, J. R. Petta, S. Ambily, Y. L. Shen, D. C. Ralph, G. G. Malliaras, Adv. Mater. 2003, 15, 1632.
22. W. R. Silveira, J. A. Marohn, Rev. Sci. Instrum. 2003, 74, 267.
23. T. R. Albrecht, P. Grutter, D. Horne, D. Rugar, J. Appl. Phys. 1991, 69, 668.
24. R. A. Street, A. Salleo, M. L. Chabinyc, Phys. Rev. B 2003, 68, 085 316.
25. J. E. Northrup, M. L. Chabinyc, Phys. Rev. B 2003, 68, 041 202.
26. C. Schönenberg, S. F. Alvarado, Phys. Rev. Lett. 1990, 65, 3162.
27. D. Rugar, H. J. Mamin, P. Guethner, Appl. Phys. Lett. 1989, 55, 2588.