Cast: An electrical stress test to monitor single bit failures in flash-EEPROM structures

Microelectronics Reliability

Volumn 37, Issue 3, 1997, Pages 473-481

  Cappelletti, P ^a   Bez, R ^a   Cantarelli, D ^a   Nahmad, D ^a   Ravazzi, L ^a  

^a STMICROELECTRONICS   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; DEFECTS; ELECTRIC BREAKDOWN; ELECTRIC FIELDS; FAILURE ANALYSIS; OXIDES; PROM; RELIABILITY;

ELECTRICAL STRESS TEST; FLASH EEPROM;

MICROELECTRONICS;

EID: 0031103625     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/0026-2714(95)00214-6     Document Type: Article

References (3)

1. Crook, D. Detecting oxide quality problems using JT testing. Proc 29th IRPS, 1991, p. 337.
2. Cappelletti, P., Ghezzi, P., Pio, F., and Riva, C., Accelerated current test for fast tunnel oxide evaluation, Proc. ICMTS91, 1991, Vol. 4, p. 81.
3. 2. J. Appl. Phys., 1969, 40, 278.