Noise characteristics of radiation-induced soft breakdown current in ultrathin gate oxides

IEEE Transactions on Nuclear Science

Volumn 48, Issue 6 I, 2001, Pages 2093-2100

  Cester, Andrea ^a,b   Bandiera, Leonardo ^b   Ceschia, Marco ^a,b   Ghidini, Gabriella ^c   Paccagnella, Alessandro ^a,b  

^a IEEE   (Italy)

^b UNIVERSITY OF PADOVA   (Italy)

^c STMICROELECTRONICS   (Italy)

Author keywords

Noise in MOS devices; Oxide reliability; Radiation soft breakdown; Radiation stresses

Indexed keywords

RADIATION STRESSES;

COMPUTER SIMULATION; ELECTRIC BREAKDOWN; GATES (TRANSISTOR); HIGH TEMPERATURE EFFECTS; ION IMPLANTATION; LEAKAGE CURRENTS; MATHEMATICAL MODELS; OXIDES; PROBABILITY DISTRIBUTIONS; RADIATION EFFECTS; SPURIOUS SIGNAL NOISE; ULTRATHIN FILMS;

MOS CAPACITORS;

EID: 0035720550     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.983178     Document Type: Conference Paper

References (33)

1. Total dose behavior of commercial submicron VLSI technologies at low dose rate
2. Ionizing radiation induced leakage current on ultra-thin gate oxides
3. Radiation induced leakage current and stress induced leakage current in ultra-thin gate oxides
4. A model of radiation induced leakage current (RILC) in ultra-thin gate oxides
5. Low field leakage current and soft breakdown in ultra-thin gate oxides after heavy ions, electrons or x-ray irradiation
6. Total dose dependence of radiation induced leakage current in ultra-thin gate oxides
7. From radiation induced leakage current to soft-breakdown in irradiated MOS devices with ultra-thin gate oxide
8. Precursor ion damage and angular dependence of single event gate rupture in thin oxides
9. Break-down of gate oxides during irradiation with heavy ions
10. Effect of ion energy upon dielectric breakdown of the capacitor response in vertical power MOSFETs
11. Dielectric breakdown of thin oxides during ramped current-temperature stress
12. X-ray irradiation effect on the reliability of ultra-thin gate oxides and oxynitrides
13. 2 films under constant current stress
14. Soft breakdown conduction in ultrathin (3-5 nm) gate dielectrics
15. Soft breakdown of ultra-thin gate oxide layers
16. Explanation of soft and hard breakdown and its consequences for area scaling
17. 2 PROM's - Part II: Prediction of steady-state SILC-related disturb characteristics
18. Ultra-thin gate dielectrics: They break down, but do they fail?
19. Are soft breakdown and hard break-down of ultrathin gate oxides actually different failure mechanisms?
20. A function-fit model for the soft breakdown failure mode
21. Analysis of the gate voltage fluctuation in ultra-thin gate oxides after soft breakdown
22. Soft breakdown in ultrathin gate oxides: Correlation with the percolation theory of nonlinear conductors
23. 2 gate oxides
24. Modeling of soft breakdown spots in silicon dioxide films as point contacts
25. Random telegraph signal in the quasibreakdown current of MOS capacitors
26. Electrical stress-induced variable range hopping conduction in ultra-thin silicon dioxides
27. Common origin for stress-induced leakage current and electron trap generation
28. Temperature-in-dependent switching rates for a random telegraph signal in a silicon metal-oxide-semiconductor field-effect transistor at low temperatures
29. Border traps in MOS devices
30. Noise in solid state microstructures: A new perspective on individual defects, interface states and low frequency (1/f) noise
31. Linearity of 1/f noise mechanisms