High total dose tolerance of prototype silicon nanocrystal non-volatile memory cells

IEEE Transactions on Nuclear Science

Volumn 51, Issue 6 II, 2004, Pages 3822-3826

  Petkov, Mihail P ^a   Douglas Bell, L ^a   Atwater, Harry A ^b  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^b California Institute of Technology   (United States)

Author keywords

Field effect transistors (FETs); Nonvolatile memory (NVM)

Indexed keywords

CARBON NANOTUBES; CHEMICAL VAPOR DEPOSITION; CMOS INTEGRATED CIRCUITS; DATA STORAGE EQUIPMENT; FIELD EFFECT TRANSISTORS; MICROELECTROMECHANICAL DEVICES; MOBILE TELECOMMUNICATION SYSTEMS; SINGLE CRYSTALS; THERMAL EFFECTS;

NONVOLTAILE MEMORY (NVM); SINGLE EVENT EFFECTS (SEE); STORAGE ELEMENTS; TOTAL IONIZING DOSES;

SEMICONDUCTING SILICON;

EID: 11144242491     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2004.839141     Document Type: Conference Paper

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