Mechanism of leakage current reduction of tantalum oxide capacitors by postmetallization annealing

Applied Physics Letters

Volumn 89, Issue 26, 2006, Pages

  Lau, W S ^a   Khaw, K K ^a   Han, Taejoon ^b   Sandler, Nathan P ^b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b LAM RESEARCH CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HYDROGEN PASSIVATION; POSTMETALLIZATION ANNEAL (PMA); TANTALUM OXIDE;

ANNEALING; LEAKAGE CURRENTS; METALLIZING; PASSIVATION; PROCESS CONTROL; TANTALUM COMPOUNDS;

CAPACITORS;

EID: 33846118818     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2408645     Document Type: Article

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