A comparison of defect states in tantalum pentoxide (Ta2O5) films after rapid thermal annealing in O2 or N2O by zero-bias thermally stimulated current spectroscopy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 5 SUPPL. A, 1996, Pages 2599-2604

  Lau, Wai Shing ^a   Khaw, Kee Keong ^a   Qian, Peng Wei ^a   Sandler, Nathan P ^b   Chu, Paul K ^c  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b LAM RESEARCH CORPORATION   (United States)

^c CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

Chemical vapor deposition (CVD); Defect states; Leakage current; Nitrous oxide (N2O); Oxygen; Rapid thermal annealing (RTA); Tantalum pentoxide (Ta2O5); Thermally stimulated currrent (TSC); Traps

Indexed keywords

ANNEALING; CAPACITORS; CRYSTAL DEFECTS; CURRENT VOLTAGE CHARACTERISTICS; LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITROGEN OXIDES; SILICON WAFERS; SPECTROSCOPY; TANTALUM COMPOUNDS;

DEFECT STATES; DIFFUSION BARRIER; FILM THICKNESS; HEATING RATE; TANTALUM PENTOXIDE FILMS; TRAPS; ZERO BIAS THERMALLY STIMULATED CURRENT SPECTROSCOPY;

SEMICONDUCTING FILMS;

EID: 0030146519     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.2599     Document Type: Review

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