Evaluation of RF capacitance extraction for ultrathin ultraleaky SOI MOS devices

IEEE Electron Device Letters

Volumn 28, Issue 1, 2007, Pages 45-47

  Yu, Chuanzhao ^a   Zhang, J ^b   Yuan, J S ^a   Duan, F ^b   Jayanarananan, S K ^b   Marathe, A ^b   Cooper, S ^b   Pham, V ^b   Goo, J S ^b  

^a UNIVERSITY OF CENTRAL FLORIDA   (United States)

^b ADVANCED MICRO DEVICES   (United States)

Author keywords

Capacitance measurement; Inversion oxide thickness; Leakage current; Radio frequency (RF); S parameter

Indexed keywords

CAPACITANCE; CAPACITANCE MEASUREMENT; DIELECTRIC MATERIALS; GATES (TRANSISTOR); LEAKAGE CURRENTS; MOSFET DEVICES; SCATTERING PARAMETERS; SILICON ON INSULATOR TECHNOLOGY;

INVERSION OXIDE THICKNESS; RADIO FREQUENCY; ULTRATHIN ULTRALEAKY GATE DIELECTRICS;

MOS DEVICES;

EID: 33846005856     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2006.886413     Document Type: Article

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