An improved but reliable model for MESFET parasitic capacitance extraction

IEEE MTT-S International Microwave Symposium Digest

Volumn 1, Issue , 2003, Pages

  Ooi, B L ^a   Ma, J Y ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

Small Signal Equivalent Circuit

Indexed keywords

FREQUENCIES; INDUCTANCE; MATHEMATICAL MODELS; MESFET DEVICES; SIGNAL PROCESSING;

CAPACITANCE EXTRACTION;

CAPACITANCE;

EID: 0041592691     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. G. Dambrine, A. Cappy, F. Heliodore, and E. Playez, " A new method for determining the FET small-signal equivalent circuit, " IEEE Trans. Microwave Theory Tech., vol. 36, no. 7, pp.1151-1159, July 1988
2. J.A.Reynoso-Hernandez, B. Ramirez-Duran, J. Ibarra-Villasenor, and J. Perdomo, "Reliable RF techniques for extracting parasitic elements in microwave FET's", International IEEE Workshop on Experimentally Based 2*100 μm FET Device Modelling & Related Nolinear Circuit Design, 1996.
3. J.A. Reynoso-Hernandez, F.E. Rangel-Patino, and J. Perdomo, "Full RF Characterization for Extracting the Small-Signal Equivalent Circuit in Microwave FET's", IEEE Transactions on Microwave Theory and Techniques, vol. 44, no.12, December 1996.
4. Paul M. White, Richard M. Healy "Improved Equivalent Circuit for Determination of MESFET and HEMT Parasitic Capacitances from "Coldfet" Measurements", IEEE Microwave and Guided Wave Letters, vol. 3, no.12, pp. 453-454, December 1993