Method to determine intrinsic and extrinsic base-collector capacitance of HBTs directly from bias-dependent S-parameter data

IEEE Electron Device Letters

Volumn 22, Issue 3, 2001, Pages 116-118

  Hattendorf, Michael ^b   Scott, Dennis ^b   Yang, Qinghong ^b   Feng, Milton ^a,b  

^a IEEE

^b University of Illinois at Urbana Champaign   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; MATHEMATICAL MODELS; SCATTERING PARAMETERS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SPURIOUS SIGNAL NOISE;

EXTRINSIC BASE COLLECTOR CAPACITANCE; INDIUM GALLIUM PHOSPHIDE; INTRINSIC BASE COLLECTOR CAPACITANCE;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0035279143     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.910613     Document Type: Article

References (11)

1. Submicron transferred-substrate heterojunction bipolar transistors
2. Reduction of the base-collector capacitance in InP/GaInAs heterojunction bipolar transistors due to electron velocity modulation
3. Evaluation of the factors determining HBT high-frequency performance by direct analysis of S-parameter data
4. A physical, yet simple, small-signal equivalent circuit for the heterojunction bipolar transistor
5. Direct extraction of the AlGaAs/GaAs heterojunction bipolar transistor small-signal equivalent circuit
6. Extraction of the InP/GaInAs heterojunction bipolar transistor small-signal equivalent circuit
7. Direct extraction of HBT equivalent-circuit elements
8. Parameter-extraction method for heterojunction bipolar transistors
9. Current dependence of base-collector capacitance of bipolar transistors
10. High-speed, low-noise InGaP/GaAs heterojunction bipolar transistors