Characterization and modeling of AlGaN/GaN MOS capacitor with leakage for large signal transistor modeling

IEEE Microwave and Wireless Components Letters

Volumn 15, Issue 10, 2005, Pages 664-666

  Dandu, K ^a,b   Saripalli, Y ^a,b   Braddock, D ^a,b   Johnson, Mark ^a,b   Barlage, D W ^a,b  

^a IEEE   (United States)

^b NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

AlGaN GaN heterostructure field effect transistors (HFETs); Metal oxide semiconductor (MOS) capacitors; Modeling

Indexed keywords

ALGAN/GAN HETEROSTRUCTURE FIELD-EFFECT TRANSISTOR (HFET); GATE LEAKAGE; SIGNAL MODELS;

CAPACITANCE; HETEROJUNCTIONS; MATHEMATICAL MODELS; SEMICONDUCTING GALLIUM COMPOUNDS;

MOS CAPACITORS;

EID: 27144474526     PISSN: 15311309     EISSN: None     Source Type: Journal    
DOI: 10.1109/LMWC.2005.856680     Document Type: Article

References (7)

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